Perspective: Molecular beam epitaxy of antiperovskite oxides

TL;DR

This paper discusses the molecular beam epitaxy growth of oxide antiperovskites, highlighting its potential for high-quality synthesis and advanced characterization to explore their unique electronic properties.

Contribution

It demonstrates the feasibility of atomically controlled growth of oxide antiperovskites using MBE, enabling detailed study of their electronic states.

Findings

High structural quality of grown antiperovskites

Seamless integration with advanced characterization tools

Feasibility of atomically controlled growth

Abstract

Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr$_3$PbO and Sr$_3$SnO. We show that MBE offers great potential not only in growing antiperovskites with high structural quality, but also in providing a means to seamlessly connect with advanced characterization tools, including x-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED), reflection high-energy electron diffraction (RHEED), and scanning tunneling microscopy (STM), to facilitate the analyses of their intrinsic properties. The initial results point toward the feasibility of atomically controlled antiperovskite growth, which could open doors to study topological and correlated electronic states in an electronic environment quite distinct from what is available in conventional complex oxides.