Phonon-limited resistivity of multilayer graphene systems
Seth M. Davis, Yang-Zhi Chou, Fengcheng Wu, and Sankar Das Sarma

TL;DR
This paper theoretically investigates how complex band structures in multilayer graphene influence phonon-limited electrical resistivity, revealing nonlinear temperature dependence and emphasizing the role of geometric features in transport properties.
Contribution
It systematically analyzes the impact of anisotropic band geometry on resistivity in Bernal bilayer and rhombohedral trilayer graphene, highlighting effects not previously studied.
Findings
Band geometry causes nonlinear T-dependence in resistivity.
Geometric features affect the Bloch-Grüneisen crossover.
Results align with recent experimental observations.
Abstract
We calculate the theoretical contribution to the doping and temperature () dependence of electrical resistivity due to scattering by acoustic phonons in Bernal bilayer graphene (BBG) and rhombohedral trilayer graphene (RTG). We focus on the role of nontrivial geometric features of the detailed, anisotropic band structures of these systems - e.g. Van Hove singularities, Lifshitz transitions, Fermi surface anisotropy, and band curvature near the gap - whose effects on transport have not yet been systematically studied. We find that these geometric features strongly influence the temperature and doping dependencies of the resistivity. In particular, the band geometry leads to a nonlinear -dependence in the high- equipartition regime, complicating the usual to Bloch-Gr\"{u}neisen crossover. Our focus on BBG and RTG is motivated by recent experiments in these…
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Taxonomy
TopicsGraphene research and applications · Quantum and electron transport phenomena · Thermal properties of materials
