Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response
San-Dong Guo, Wen-Qi Mu, Hao-Tian Guo, Yu-Ling Tao, Bang-Gui Liu

TL;DR
This paper predicts a new Janus monolayer VCClBr as a piezoelectric quantum spin Hall insulator with robust topological properties and significant out-of-plane piezoelectric response, promising for high-speed electronic applications.
Contribution
The study introduces a novel 2D Janus monolayer VCClBr as a PQSHI with stable topological and piezoelectric properties, expanding the family of functional 2D materials.
Findings
VCClBr is dynamically, mechanically, and thermally stable.
VCClBr exhibits a nontrivial topological phase with a 76 meV gap including SOC.
It has strong out-of-plane piezoelectric coefficients, surpassing many existing 2D materials.
Abstract
The combination of piezoelectricity with nontrivial topological insulating phase in two-dimensional (2D) systems, namely piezoelectric quantum spin Hall insulator (PQSHI), is intriguing for exploring novel topological states toward the development of high-speed and dissipationless electronic devices. In this work, we predict a PQSHI Janus monolayer VCClBr constructed from , which is dynamically, mechanically and thermally stable. In the absence of spin orbital coupling (SOC), VCClBr is a narrow gap semiconductor with gap value of 57 meV, which is different from Dirac semimetal . The gap of VCClBr is due to built-in electric field caused by asymmetrical upper and lower atomic layers, which is further confirmed by external-electric-field induced gap in . When including SOC, the gap of VCClBr is improved to 76 meV, which is larger than the…
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