Greater than 5 Percent Compressive Strain in Graphene via the Self Rolled up Membrane Platform

TL;DR

This paper demonstrates a novel self-rolled-up membrane platform to induce over 5% compressive strain in graphene, enabling advanced strain engineering for optoelectronic property control.

Contribution

It introduces a self-rolled-up membrane method for applying high levels of strain to graphene, surpassing conventional techniques.

Findings

Achieved approximately 5% compressive strain in graphene.

Raman spectroscopy confirmed strain via G peak shifts.

Strain level can be increased by reducing the SRuM diameter.

Abstract

Graphene is an atomically thin metallic membrane capable of sustaining reversible strain and offers a tempting prospect of controlling its optoelectronic properties via strain. Graphenes exceptional mechanical flexibility and tensile strength provide a lot of room for strain engineering. Here we use the self-rolled-up membrane platform for strain engineering and integration of graphene with stressed dielectric thin films. Graphene rolls up or down together with the stressed film upon releasing from the substrate and the curvature of the rolled-up film stack enables the strain tuning of the graphene monolayer. Raman spectroscopy was used to characterize the uniaxial strain in rolled up graphene by quantifying the red shift and splitting of the G peak in the doubly degenerate E2g optical mode. Approximately 5 percent compressive strain is realized using a SRuM diameter of roughly 2 microns. By reducing the diameter of the SRuM structure, even higher strain level can be reached. The SRuM approach can also be readily applied to induce strain in other materials beyond the level that can be achieved using conventional approaches.