Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

TL;DR

This paper reports the first electrically pumped quantum-dot lasers grown on 300 mm patterned silicon wafers, demonstrating continuous wave operation, high output power, and efficient coupling for scalable on-chip photonic integration.

Contribution

It presents a novel monolithic integration of QD lasers on large-scale patterned Si wafers with successful growth, fabrication, and operation, overcoming previous growth and coupling challenges.

Findings

Continuous wave lasing up to 60°C

Maximum output power of 126.6 mW at 20°C

Double-side wall plug efficiency of 8.6%

Abstract

Monolithic integration of quantum dot (QD) gain materials onto Si photonic platforms via direct epitaxial growth is a promising solution for on-chip light sources. Recent developments have demonstrated superior device reliability in blanket hetero-epitaxy of III-V devices on Si at elevated temperatures. Yet, thick, defect management epi designs prevent vertical light coupling from the gain region to the Si-on-Insulator (SOI) waveguides. Here, we demonstrate the first electrically pumped QD lasers grown on a 300 mm patterned (001) Si wafer with a butt-coupled configuration by molecular beam epitaxy (MBE). Unique growth and fabrication challenges imposed by the template architecture have been resolved, contributing to continuous wave lasing to 60 {\deg}C and a maximum double-side output power of 126.6 mW at 20 {\deg}C with a double-side wall plug efficiency of 8.6%. The potential for robust on-chip laser operation and efficient low-loss light coupling to Si photonic circuits makes this heteroepitaxial integration platform on Si promising for scalable and low-cost mass production.