An extraction method for mobility degradation and contact resistance of graphene transistors

TL;DR

This paper introduces a new extraction method for determining mobility degradation, contact resistance, and transconductance in graphene transistors using a novel transport model and the Y-function approach, applicable across various device architectures.

Contribution

A straightforward, architecture-independent extraction methodology for mobility degradation, contact resistance, and transconductance in GFETs based on a novel transport model and the Y-function.

Findings

Accurate extraction of device parameters from experimental data.

Effective modeling of mobility degradation effects.

Evaluation of channel resistance using extracted parameters.

Abstract

The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction methodology, not provided before, is enabled by applying the concept of the well-known Y-function to the \textit{I-V} device characteristics. The method works regardless the gate device architecture. An accurate description of experimental data of fabricated devices is achieved with the underlying transport equation by using the extracted parameters. An evaluation of the channel resistance, enabled by the extracted parameters here, has been also provided.