Recent Progress in the Theory of Bulk Photovoltaic Effect
Zhenbang Dai, Andrew M. Rappe

TL;DR
This paper reviews recent theoretical advances and experimental insights into the bulk photovoltaic effect, highlighting mechanisms like shift, ballistic, and injection currents, and discusses implications for material design and future research directions.
Contribution
It provides a comprehensive review of recent progress in the theories of BPVE, including numerical implementations and materials design strategies.
Findings
First-principles calculations accurately predict shift current.
Recent numerical methods enable analysis of ballistic and injection currents.
Theories inform new materials design strategies for BPVE applications.
Abstract
The bulk photovoltaic effect (BPVE) occurs in solids with broken inversion symmetry and refers to DC current generation due to uniform illumination, without the need of heterostructures or interfaces, a feature that is distinct from the traditional photovoltaic effect. Its existence has been demonstrated almost 50 years ago, but predictive theories only appeared in the last ten years, allowing for the identification of different mechanisms and the determination of their relative importance in real materials. It is now generally accepted that there is an intrinsic mechanism that is insensitive to scattering, called shift current, where first-principles calculations can now give highly accurate predictions. Another important but more extrinsic mechanism, called ballistic current, is also attracting a lot of attention, but due to the complicated scattering processes, its numerical…
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Taxonomy
TopicsSemiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
