Spin field-effect transistors based on massless birefringent Dirac fermions in polar Dirac semimetals

TL;DR

This paper proposes a novel spin field-effect transistor design utilizing massless birefringent Dirac fermions in polar Dirac semimetals, enabling electrical control of spin and conductance for advanced spintronic applications.

Contribution

It introduces a theoretical model of a spin transistor based on polar Dirac semimetals with unique spin manipulation capabilities due to their band structure and spin-orbit coupling.

Findings

Conductance can be controlled by gate voltage sign.

The device exploits gapless Dirac band structures.

Strong spin-orbit coupling enables spin manipulation.

Abstract

The Datta-Das-type spin field-effect transistor, using a two-dimensional electron gas in a semiconductor heterostructure as a channel, plays a key role in spintronics. Here, we theoretically present a type of spin field-effect transistor based on massless birefringent Dirac fermions in polar Dirac semimetals. The manipulation of spin arises from the existence of the strong spin-orbit coupling, polar space groups, and Dirac cones in a single phase. The oscillatory channel conductance can be controlled by the sign of gate voltage in addition to its magnitude due to the gapless band structures of polar Dirac semimetals. Such spin field-effect transistor provides guidance for the further design of spintronic devices.