Suppression of surface roughening during ion bombardment of semiconductors

TL;DR

This paper presents a novel method using hydrogen gas to suppress surface roughening during ion bombardment of semiconductors, enabling smoother surfaces and expanding ion beam processing applications.

Contribution

Introduction of hydrogen gas stabilization to prevent surface roughening during ion beam processing of semiconductors, including enhancement via plasma radicalization.

Findings

Hydrogen gas stabilizes surface mass flow during ion bombardment.

Smooth surfaces achieved during ion-beam processing of semiconductors.

Method applicable to elemental and compound semiconductors.

Abstract

Ion beams are used routinely for processing of semiconductors, particularly sputtering, ion implantation and direct-write fabrication of nanostructures. However, the utility of ion beam techniques is limited by crystal damage and surface roughening. Damage can be reduced or eliminated by performing irradiation at elevated temperatures. However, at these conditions, surface roughening is highly problematic due to thermal mobility of adatoms and surface vacancies. Here we solve this problem using hydrogen gas, which we use to stabilize surface mass flow and suppress roughening during ion bombardment of elemental and compound semiconductors. We achieve smooth surfaces during ion-beam processing, and show that the method can be enhanced by radicalizing H2 gas using a remote plasma source. Our approach is broadly applicable, and expands the utility of ion beam techniques for the processing and fabrication of functional materials and nanostructures.