Protecting and Enhancing the Photoelectrocatalytic Nitrogen Reduction to Ammonia Performance of InGaN Nanowires using Mo2C Nanosheets and GaN Buffer Layer

TL;DR

This study demonstrates enhanced photoelectrocatalytic nitrogen reduction to ammonia using InGaN nanowires with Mo2C nanosheets and a GaN buffer layer, achieving high ammonia production, stability, and efficiency.

Contribution

The paper introduces a novel heterostructure of Mo2C/GaN/InGaN nanowires that significantly improves PEC N2 reduction performance through band alignment and charge transfer optimization.

Findings

Achieved 7.2 g h-1 cm-2 NH3 production with 12.6% Faradaic efficiency.

Demonstrated excellent stability and reproducibility over long-term operation.

DFT analysis shows GaN buffer layer optimizes band edges for charge transfer.

Abstract

Photoelectrocatalytic (PEC) reduction of N2 to ammonia (NH3) is emerging as the potential alternative to overcome the standard Haber-Bosch approach. In this communication, solar N2 reduction was demonstrated with molybdenum carbide (Mo2C) co-catalyst assisted indium gallium nitride (InGaN) nanowires. The effect of aiding Mo2C on InGaN NWs arrests the dark current and demonstrated the saturation current under illumination was briefly elucidated. Large NH3 production of 7.2 gh-1cm-2 with high Faradaic efficiency of 12.6 % was realized at -0.2 V vs. reversible hydrogen electrode for the Mo2C/GaN/InGaN heterostructure. Notably, the proposed heterostructure also exemplifies excellent stability and reproducibility with excellent selectivity in the long-term chronoamperometry analysis. Further, the incorporation of GaN buffer layer in between Mo2C and InGaN NWs was deeply investigated. From Density Functional Theory (DFT) analysis, the incorporation of GaN buffer layer aids the suitable band edge position for the transfer of photogenerated charge carrier from InGaN to Mo2C co-catalyst, and unique 3d orbital of Mo2C is highly suitable to hold N2 for effective reduction to NH3.