Proposal for stable atom trapping on a GaN-on-Sapphire chip

TL;DR

This paper proposes a stable, low-power atom trapping platform on a GaN-on-Sapphire chip using high-order modes in a microring, enabling advanced quantum photonic applications.

Contribution

It introduces a novel stable atom trapping scheme on an unsuspended photonic chip utilizing high-order modes, reducing power requirements significantly.

Findings

Evanescent-field trap potential well of ~0.3 mK achieved with 10 mW power

Stable single atom trapping feasible with low laser power

Potential for high-fidelity quantum gates and single-photon sources

Abstract

The hybrid photon-atom integrated circuits, which include photonic microcavities and trapped single neutral atom in their evanescent field, are of great potential for quantum information processing. In this platform, the atoms provide the single-photon nonlinearity and long-lived memory, which are complementary to the excellent passive photonics devices in conventional quantum photonic circuits. In this work, we propose a stable platform for realizing the hybrid photon-atom circuits based on an unsuspended photonic chip. By introducing high-order modes in the microring, a feasible evanescent-field trap potential well $\sim0.3\,\mathrm{mK}$ could be obtained by only $10\,\mathrm{mW}$-level power in the cavity, compared with $100\,\mathrm{mW}$-level power required in the scheme based on fundamental modes. Based on our scheme, stable single atom trapping with relatively low laser power is feasible for future studies on high-fidelity quantum gates, single-photon sources, as well as many-body quantum physics based on a controllable atom array in a microcavity.