Ion-Implantation as Pixel Isolation for Fabrication of Planar Strain-Balanced Antimony-based Superlattice Infrared Photodetectors

TL;DR

This paper reviews the use of ion-implantation for device isolation in planar strain-balanced antimony-based superlattice infrared photodetectors, offering a simplified fabrication process compared to traditional mesa etching.

Contribution

It introduces ion-implantation as an effective alternative to mesa etching for isolating pixels in planar SLS infrared photodetectors, reducing fabrication complexity.

Findings

Ion-implantation enables planar device isolation without deep etching.

The method simplifies fabrication and potentially improves device performance.

Progress in planar SLS IR photodetectors using ion-implantation is summarized.

Abstract

Strained layer superlattice (SLS) material system is a dynamic and relatively new material for infrared detection. Large format, small-pitch and low-cost focal plane arrays (FPAs) with more pixels are in demand for different applications. For the current SLS based FPAs mesa etching are used to define the pixels. For those SLS based FPAs with scaled pixel size making the mesa structures can be challenging due to the need for deep etch, and then passivation process. One of the possible solutions to address this issue is to consider a planar structure and avoiding the mesa-isolation etching or complex surface treatment/ passivation process. In this work, the recent progress on planar SLS infrared photodetectors using ion-implantation for device isolation is reviewed. In this method of fabrication, ion implantation was applied from the top to bombardment the surface for device isolation, like mesa-isolation step in device fabrication.