Realization of ultra-broadband IR up-conversion imaging

TL;DR

This paper reports the development of an ultra-broadband IR up-conversion device based on a p-GaAs homojunction HIWIP detector-LED, capable of covering visible to terahertz wavelengths for imaging and sensing applications.

Contribution

It introduces a novel p-GaAs homojunction HIWIP-LED device with ultra-broad IR response, enabling high-performance, pixel-less imaging across multiple infrared and terahertz regions.

Findings

Achieved responsivity of 140 mA/W at 10.5 microns in MIR

Demonstrated MIR spot imaging from a CO2 laser

Device functions as a near-IR and visible detector under zero bias

Abstract

Ultra-broadband imaging devices with high performance are in great demand for a variety of technological applications, including imaging, remote sensing, and communications. An ultra-broadband up-converter is realized based on a p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) detector-light emitting diode (LED) device. The device demonstrates an ultra-broad response ranging from visible to terahertz (THz) with good reproducibility. The peak responsivity in the mid-infrared (MIR) region is 140 mA/W at 10.5 microns. The HIWIP-LED shows enormous potential for ultra-broadband up-conversion covering all infrared atmospheric windows, as well as the THz region, and the pixel-less imaging of the MIR spot from the CO2 laser is further demonstrated. In addition, the proposed up-converter also performs as a near-infrared and visible detector under zero bias by using a bi-functional LED. Thanks to its ultra-wide response, the HIWIP-LED up-converter has great promise for stable, high-performance ultra-broadband pixel-less imaging and multi-functional analysis systems.