Optically induced resonant tunneling of electrons in nanostructures
M. V. Boev, V. M. Kovalev, O. V. Kibis

TL;DR
This paper develops a theoretical framework for resonant electron tunneling in nanostructures driven by high-frequency electromagnetic fields, revealing conditions for perfect transparency at resonance.
Contribution
It introduces a novel theory modeling driven barriers as stationary two-barrier systems with quasi-stationary states, enabling analysis of resonant tunneling under electromagnetic irradiation.
Findings
Resonant tunneling occurs when electron energy matches quasi-stationary states.
The driven barrier can be treated as a stationary two-barrier potential.
Electromagnetic fields can induce full transparency at resonance.
Abstract
We developed the theory of elastic electron tunneling through a potential barrier driven by a strong high-frequency electromagnetic field. It is demonstrated that the driven barrier can be considered as a stationary two-barrier potential which contains the quasi-stationary electron states confined between these two barriers. When the energy of an incident electron coincides with the energy of the quasi-stationary state, the driven barrier becomes fully transparent for the electron (the resonant tunneling). The developed theory is applied to describe electron transport through a quantum point contact irradiated by an electromagnetic wave.
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Topological Materials and Phenomena
