Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification
Aiji Liang, Cheng Chen, Huijun Zheng, Wei Xia, Kui Huang, Liyang Wei,, Haifeng Yang, Yujie Chen, Xin Zhang, Xuguang Xu, Meixiao Wang, Yanfeng Guo,, Lexian Yang, Zhongkai Liu, Yulin Chen

TL;DR
This study demonstrates that surface potassium dosing can effectively modify the topological surface state in MnBi2Te4, removing trivial states and moving towards a minimal topological electronic structure in magnetic topological insulators.
Contribution
The paper shows that potassium surface modification can eliminate trivial surface states in MnBi2Te4, advancing the realization of a minimal topological electronic structure in magnetic topological insulators.
Findings
Potassium dosing removes trivial Rashba-type surface states.
Surface modification is driven by electrochemical reactions of K clusters.
Provides a clearer understanding of the band structure in MnBi2Te4.
Abstract
The topological electronic structure plays a central role in the non-trivial physical properties in topological quantum materials. A minimal, hydrogen-atom-like topological electronic structure is desired for researches. In this work, we demonstrate an effort towards the realization of such a system in the intrinsic magnetic topological insulator MnBi2Te4, by manipulating the topological surface state (TSS) via surface modification. Using high resolution laser- and synchrotron-based angle-resolved photoemission spectroscopy (ARPES), we found the TSS in MnBi2Te4 is heavily hybridized with a trivial Rashba-type surface state (RSS), which could be efficiently removed by the in situ surface potassium (K) dosing. By employing multiple experimental methods to characterize K dosed surface, we attribute such a modification to the electrochemical reactions of K clusters on the surface. Our work…
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