A High-Voltage Characterisation Platform For Emerging Resistive Switching Technologies

TL;DR

This paper introduces a 16x16 high-voltage memristor characterization array with advanced CMOS circuitry, enabling large voltage application for on-chip electroforming and I-V measurements, improving the evaluation of emerging resistive switching technologies.

Contribution

It presents a novel high-voltage CMOS-based platform capable of applying up to ±22V for memristor characterization, overcoming limitations of low-voltage systems.

Findings

Supports large voltage ranges for electroforming and I-V sweeps

Incorporates Kelvin sensing for improved low-resistance measurement accuracy

Enables practical on-chip testing of emerging resistive switching devices

Abstract

Emerging memristor-based array architectures have been effectively employed in non-volatile memories and neuromorphic computing systems due to their density, scalability and capability of storing information. Nonetheless, to demonstrate a practical on-chip memristor-based system, it is essential to have the ability to apply large programming voltage ranges during the characterisation procedures for various memristor technologies. This work presents a 16x16 high voltage memristor characterisation array employing high voltage CMOS circuitry. The proposed system has a maximum programming range of $\pm22V$ to allow on-chip electroforming and I-V sweep. In addition, a Kelvin voltage sensing system is implemented to improve the readout accuracy for low memristance measurements. This work addresses the limitation of conventional CMOS-memristor platforms which can only operate at low voltages, thus limiting the characterisation range and integration options of memristor technologies.