Robust and programmable logic-in-memory devices exploiting skyrmion confinement and channeling using local energy barriers

TL;DR

This paper introduces a reliable, reprogrammable skyrmion-based logic-in-memory device that uses energy barriers for confinement and channeling, enabling high-density, non-volatile data storage and logic operations integrated with CMOS.

Contribution

It presents a novel skyrmion-based logic-in-memory device utilizing anisotropy energy barriers for confinement and channeling, with reprogrammable and cascadable full adder gates.

Findings

Achieves reliable data storage with skyrmion confinement

Enables reprogrammable and cascadable logic operations

Integrates with CMOS circuitry for practical applications

Abstract

Magnetic skyrmions are promising candidates for logic-in-memory applications, intrinsically merging high density non-volatile data storage with computing capabilities, owing to their nanoscale size, fast motion, and mutual repulsions. However, concepts proposed so far suffer from reliability issues as well as inefficient conversion of magnetic information to electrical signals. In this paper, we propose a logic-in-memory device which exploits skyrmion confinement and channeling using anisotropy energy barriers to achieve reliable data storage and synchronous shift in racetracks combined with cascadable and reprogrammable logics relying purely on magnetic interactions. The device combines a racetrack shift register based on skyrmions confined in nanodots with Full Adder (FA) gates. The designed FA is reprogrammable and cascadable and can also be used to perform simple logic operations such as AND, OR, NOT, NAND, XOR and NXOR. The monolithic design of the logic gate and the absence of any complex electrical contacts makes the device ideal for integration with conventional CMOS circuitry.