Evidence of enhanced Zn-diffusion observed during the growth of Inverted Metamorphic Solar Cells

TL;DR

This study investigates zinc diffusion in inverted multijunction solar cells, revealing its mechanism and effects on device performance, which is crucial for improving solar cell reliability and efficiency.

Contribution

The paper provides new evidence of zinc diffusion mechanisms during growth and their impact on the electrical properties of inverted multijunction solar cells.

Findings

Zinc diffuses from the AlGaInP layer to the GaInP emitter during growth.

Diffusion is triggered by tunnel junction growth and involves point defects.

Zinc diffusion affects bandgap, passivation, and carrier quality.

Abstract

Zinc-diffusion can induce multiple failures in the electrical performance of a multijunction solar cell. In this work, we show an important Zn-diffusion from the AlGaInP back-surface-field layer to the emitter of the GaInP top cell of an inverted multijunction solar cell. Through the analysis of different doping profiles, we provide strong evidence that the diffusion mechanism is (1) triggered by the growth of the tunnel junction cathode and (2) involves point defects. We analyze the implications of Zn-diffusion on the bandgap, the rear-passivation and the minority carrier quality of the GaInP solar subcell by relating the electrical performance of different samples to its corresponding doping profile.