Graphene/fluorinated graphene systems for a wide spectrum of electronics application
I.V. Antonova, I.A. Kotin, I.I. Kurkina, A.I. Ivanov, E.A. Yakimchuk,, N.A. Nebogatikova, V.I. Vdovin, A.K. Gutakovskii, R.A. Soots

TL;DR
This study fabricates and analyzes graphene/fluorinated graphene heterostructures, revealing their stability, insulating properties, and potential for advanced electronic applications like transistors and resistive switching devices.
Contribution
It demonstrates the fabrication of stable graphene/fluorographene heterostructures with enhanced electronic properties and explores their potential in flexible electronics and other applications.
Findings
FG acts as an effective insulating layer with high breakdown field.
Charge-carrier mobility increases 5-6 times in hybrid structures.
FG-based heterostructures show promise for flexible and advanced electronic devices.
Abstract
Heterostructures prepared from graphene and fluorographene (FG) using the technology of 2D printing on solid and flexible substrates were fabricated and studied. Excellent stability of printed graphene layers and, to a lesser degree, composite graphene: PEDOT: PSS layers were shown. Extraordinary properties of FG as an insulating layer for graphene-based heterostructures at fluorination degree above 30% were demonstrated. It is shown that the leakage current in thin (20-40 nm) films is normally smaller than 10^-8 A/cm2, the breakdown field being greater than 108 V/cm. In hybrid structures with printed FG layers in which graphene was transferred onto, or capsulated with, an FG layer, an increase in charge-carrier mobility and material conductivity amounting to 5-6 times was observed. The spectrum of future applications of FG layers can be further extended due to the possibility of…
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