Graphene/SOI-based self-powered Schottky barrier photodiode array

TL;DR

This paper reports the fabrication and characterization of a graphene/SOI-based self-powered Schottky barrier photodiode array with high responsivity and reversible photocurrent, enabling advanced multi-wavelength and high-speed optoelectronic applications.

Contribution

It introduces a novel graphene/SOI-based photodiode array with self-powered operation and demonstrates its high responsivity and reversibility, advancing multi-wavelength sensing technologies.

Findings

Maximum spectral responsivity comparable to commercial photodiodes

Excellent photocurrent reversibility

Potential for high-speed and multi-wavelength applications

Abstract

We have fabricated 4-element Graphene/Silicon on Insulator (SOI) based Schottky barrier photodiode array ()PDA and investigated its optoelectronic device performance. In our device design, monolayer graphene is utilized as common electrode on lithographically defined linear array of n-type Si channels on SOI substrate. As revealed by wavelength resolved photocurrent spectroscopy measurements, each element in the PDA structure exhibited a maximum spectral responsivity comparable to that of commercially available photodiodes operating under self-powered operational mode. Time-dependent photocurrent spectroscopy measurements showed excellent photocurrent reversibility of the device. The study presented here is expected to offer exciting opportunities in terms of high value-added graphene/Si based PDA device applications such as multi-wavelength light measurement, level metering, high-speed photometry, position/motion detection, and more.