Recent advances in inorganic oxides-based resistive random-access memory devices

TL;DR

This paper reviews recent progress in inorganic oxides-based RRAM devices, highlighting advancements, challenges, and future directions for energy-efficient, high-retention non-volatile memory technology.

Contribution

It provides a comprehensive overview of technological developments and challenges in inorganic oxides-based RRAM, including mechanisms, device structures, and performance improvements.

Findings

Enhanced understanding of resistive switching mechanisms

Advancements in device endurance and data retention

Identification of key challenges for future research

Abstract

Memory has always been a building block element for information technology. Emerging technologies such as artificial intelligence, big data, the internet of things, etc., require a novel kind of memory technology that can be energy efficient and have an exception data retention period. Among several existing memory technologies, resistive random-access memory (RRAM) is an answer to the above question as it is necessary to possess the combination of speed of RAM and nonvolatility, thus proving to be one of the most promising candidates to replace flash memory in next-generation non-volatile RAM applications. This review discusses the existing challenges and technological advancements made with RRAM, including switching mechanism, device structure, endurance, fatigue resistance, data retention period, and mechanism of resistive switching in inorganic oxides material used as a dielectric layer. Finally, a summary and a perspective on future research are presented.