Metal-insulator transition in type II heterostructures based on transition metal dichalcogenides

TL;DR

This paper analytically investigates the Coulomb interaction screening in type II heterostructures based on transition metal dichalcogenides, focusing on the metal-insulator transition and exciton energy behavior.

Contribution

It provides an analytical solution for Coulomb screening and explores the density and temperature dependence of the metal-insulator transition in these heterostructures.

Findings

Interlayer exciton energy decreases with increasing charge density.

The exciton energy approaches zero at the transition point.

Temperature influences the density at which the transition occurs.

Abstract

The problem of screening the Coulomb interaction between charge carriers in type II heterostructures based on transition metal dichalcogenides is Analytically solved. At a sufficiently high density of charge carriers, the density dependence of the interlayer exciton energy is obtained. The energy of the interlayer exciton tends to zero in the metal--insulator transition point. The presented scheme of calculations makes it possible to find the temperature dependence of the density of this transition.