Interfacial resistive switching by multiphase polarization in ion-intercalation nanofilms

TL;DR

This paper introduces a novel resistive switching mechanism in ion-intercalated nanofilms based on multiphase polarization, supported by a phase-field model that explains complex electrochemical behaviors and guides high-performance memory design.

Contribution

It proposes a new resistive switching mechanism via multiphase polarization in ion-intercalated films and develops a phase-field model to analyze and predict switching behaviors.

Findings

Model reproduces complex cyclic voltammograms of lithium titanate memristors.

Predicts switching speeds for multiphase ion-intercalation materials.

Provides insights for designing high-performance resistive memory devices.

Abstract

Nonvolatile resistive-switching (RS) memories promise to revolutionize hardware architectures with in-memory computing. Recently, ion-interclation materials have attracted increasing attention as potential RS materials for their ion-modulated electronic conductivity. In this Letter, we propose RS by multiphase polarization (MP) of ion-intercalated thin films between ion-blocking electrodes, in which interfacial phase separation triggered by an applied voltage switches the electron-transfer resistance. We develop an electrochemical phase-field model for simulations of coupled ion-electron transport and ion-modulated electron-transfer rates and use it to analyze the MP switching current and time, resistance ratio, and current-voltage response. The model is able to reproduce the complex cyclic voltammograms of lithium titanate (LTO) memristors, which cannot be explained by existing models based on bulk dielectric breakdown. The theory predicts the achievable switching speeds for multiphase ion-intercalation materials and could be used to guide the design of high-performance MP-based RS memories.