Carrier Doping Modulates 2D Intrinsic Ferromagnetic Mn2Ge2Te6 Monolayer High Curie Temperature, Large Magnetic Crystal Anisotropy

TL;DR

This study investigates the intrinsic ferromagnetism, electronic properties, and carrier doping effects in Mn2Ge2Te6 monolayer, revealing high Curie temperature, tunable magnetic anisotropy, and stability suitable for spintronic applications.

Contribution

It demonstrates how carrier doping can effectively modulate magnetic and electronic properties of Mn2Ge2Te6 monolayer, a novel 2D ferromagnetic material.

Findings

Curie temperature of 316 K for Mn2Ge2Te6.

Carrier doping tunes magnetic moments and anisotropy.

Mn2Ge2Te6 remains stable under doping and exhibits half-metallicity.

Abstract

The Mn2Ge2Te6 shows intrinsic ferromagnetic (FM) order, with Curie temperature (Tc) of 316 K. The FM order origins from superexchange interaction between Mn and Te atoms. Mn2Ge2Te6 is half-metal (HM), and spin-\b{eta} electron is a semiconductor with gap of 1.462 eV. Mn2Ge2Te6 tends in-plane anisotropy (IPA), with magnetic anisotropy energy (MAE) of -13.2 meV/f.u.. The Mn2Ge2Te6 shows good dynamical and thermal stability. Moreover, Mn2Ge2Te6 presents good ferromagnetic and half-metallic stability under charge doping. The carriers doping could effectively tune magnetic and electronic properties. Specifically, the magnetic moment, exchange parameter, and MAE could be efficiently tuned. The total magnetic moment changes linearly with charges doping. The exchange parameters could be controlled by the doping carriers. The carriers doping could modulate MAE to -18.4 (+0.4 e), -0.85 (-1.6 e), 1.31 (-2.4 e) meV/f.u., by changing hybridization between Te atoms' py and pz orbitals. Mn2Ge2Te6 with intrinsic ferromagnetism, high tunable MAE, good stability of ferromagnetism and half-metallicity could help researchers to investigate its wide application in the electronics and spintronics.