Atomic-scale Oxygen-mediated Etching of 2D MoS$_2$ and MoTe$_2$
E. Harriet {\AA}hlgren, Alexander Markevich, Sophie Scharinger,, Bernhard Fickl, Georg Zagler, Felix Herterich, Niall McEvoy, Clemens Mangler, and Jani Kotakoski

TL;DR
This study investigates how oxygen causes degradation in 2D transition metal dichalcogenides, revealing that MoTe$_2$ is reactive to oxygen while MoS$_2$ remains inert, with carbon contamination significantly accelerating damage.
Contribution
The paper provides atomic-scale insights into oxygen-induced degradation mechanisms in MoTe$_2$ and MoS$_2$, highlighting the role of carbon contamination and using DFT calculations to elucidate etching processes.
Findings
MoTe$_2$ degrades rapidly above 1×10^{-7} torr oxygen pressure.
MoS$_2$ remains inert under oxygen, with damage caused mainly by electron irradiation.
Carbon contamination accelerates MoTe$_2$ degradation by up to forty times.
Abstract
Some of the materials are more affected by oxidation than others. To elucidate the oxidation-induced degradation mechanisms in transition metal chalcogenides, the chemical effects in single layer MoS and MoTe were studied in situ in an electron microscope under controlled low-pressure oxygen environments at room temperature.Oxidation is the main cause of degradation of many two-dimensional materials, including transition metal dichalcogenides, under ambient conditions. MoTe is found to be reactive to oxygen, leading to significant degradation above a pressure of 1 torr. Curiously, the common hydrocarbon contamination found on practically all surfaces accelerates the damage rate significantly, by up to a factor of forty. In contrast to MoTe, MoS is found to be inert under oxygen environment, with all observed structural changes being caused by electron…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Advanced Photocatalysis Techniques
