A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/{\mu}m Drain Current

TL;DR

This paper demonstrates a gate-all-around In2O3 nanoribbon FET with a record high drain current of nearly 20 mA/μm, showcasing its potential for high-performance, BEOL-compatible 3D integration.

Contribution

The work introduces a novel ALD-fabricated In2O3 GAA nanoribbon FET with unprecedented drain current, advancing oxide semiconductor applications in integrated electronics.

Findings

Achieved a maximum on-state current of 19.3 mA/μm.

Demonstrated compatibility with BEOL processes.

Showed In2O3 FETs outperform conventional single-channel semiconductors.

Abstract

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielectric HfO2 of 5 nm. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain current and its related on-state performance demonstrate ALD In2O3 is a promising oxide semiconductor channel with great opportunities in BEOL compatible monolithic 3D integration.