A simple strategy to measure the contact resistance between metals and doped organic films
Anton Kirch, Axel Fischer, Robert Werberger, Shayan Miri Aabi Soflaa,, Karolina Maleckaite, Paulius Imbrasas, Johannes Benduhn, and Sebastian, Reineke

TL;DR
This paper introduces a straightforward experimental method to directly measure contact resistance at metal/doped organic film interfaces, revealing voltage drops and effects of injection layers, facilitating better understanding of charge injection in organic electronics.
Contribution
The study presents a simple, direct measurement technique for contact resistance in metal/doped organic interfaces, avoiding complex numerical methods and enabling detailed analysis of charge injection.
Findings
Contact resistance at the interface is about 200mV at 10mA/cm2.
Adding an injection layer reduces contact resistance by over an order of magnitude.
The device architecture allows for high, uniform electric fields to study the Poole-Frenkel effect.
Abstract
Charge injection from electrodes into doped organic films is a widespread technology used in the majority of state-of-the-art organic semiconductor devices. Although such interfaces are commonly considered to form Ohmic contacts via strong band bending, an experiment that directly measures the contact resistance has not yet been demonstrated. In this study, we use a simple metal/doped organic semiconductor/metal stack and study its voltage-dependent resistance. A transport layer thickness variation proves that the presented experiment gains direct access to the contact resistance of the device. We can quantify that for an operating current density of 10mA/cm2 the investigated material system exhibits a voltage drop over the metal/organic interface of about 200mV, which can be reduced by more than one order of magnitude when employing an additional injection layer. The presented…
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