Fluorinated graphene films with graphene quantum dots for electronic applications

TL;DR

This study investigates the electronic properties of fluorinated graphene films with embedded graphene quantum dots, revealing potential for electronic applications like memory and logic devices through charge transport and resistive switching behaviors.

Contribution

It introduces a fabrication method for FG films with GQDs and provides a phenomenological model for charge emission dynamics, highlighting the effects of fluorination degree on electronic properties.

Findings

Potential fluctuations up to 200 mV inside FG barriers.

Unipolar resistive switching observed in highly fluorinated films.

High current modulation in transistor-like structures with less fluorination.

Abstract

This work analyzes carrier transport, the relaxation of non-equilibrium charge, and the electronic structure of fluorinated graphene (FG) films with graphene quantum dots (GQDs). The FG films with GQDs were fabricated by means of chemical functionalization in an aqueous solution of hydrofluoric acid. High fluctuations of potential relief inside the FG barriers have been detected in the range of up to 200 mV. A phenomenological expression that describes the dependence of the time of non-equilibrium charge emission from GQDs on quantum confinement levels and film thickness (potential barrier parameters between GQDs) is suggested. An increase in the degree of functionalization leads to a decrease in GQD size, the removal of the GQD effect on carrier transport, and the relaxation of non-equilibrium charge. The study of the electronic properties of FG films with GQDs has revealed a unipolar resistive switching effect in the films with a relatively high degree of fluorination and a high current modulation in transistorlike structures with a lower degree of fluorination. 2D films with GQDs are believed to have considerable potential for various electronic applications (nonvolatile memory, 2D connections with optical control and logic elements).