Single G centers in silicon fabricated by co-implantation with carbon and proton

TL;DR

This paper demonstrates a reproducible method to create single G centers in silicon using co-implantation of carbon ions and protons, enabling single-photon emission suitable for quantum technologies.

Contribution

It introduces a novel fabrication process for isolated G centers in silicon with controlled density, advancing quantum photonics integration.

Findings

Achieved areal densities of G centers down to 0.2 μm$^{-2}$.

Confirmed single defect creation via photon antibunching.

Established a reproducible method for single-atom silicon quantum emitters.

Abstract

We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions and protons at various fluences. Decreasing the implantation fluences enables to gradually switch from large ensembles to isolated single defects, reaching areal densities of G centers down to $\sim$0.2 $\mu$m$^{-2}$. Single defect creation is demonstrated by photon antibunching in intensity-correlation experiments, thus establishing our approach as a reproducible procedure for generating single artificial atoms in silicon for quantum technologies.