Hot phonon effects and suppressed Auger recombination on 3 $\mu$m room temperature lasing in HgTe-based multiple quantum well diodes

TL;DR

This paper presents a model for a HgTe-based quantum well laser diode that suppresses Auger recombination and accounts for hot phonon effects, predicting room temperature lasing at 3 micrometers with high output power.

Contribution

It introduces a comprehensive model combining hot phonon effects and carrier dynamics to enable room temperature mid-infrared lasing in HgTe quantum well diodes, demonstrating potential for high-power applications.

Findings

Lasing predicted at 3 μm wavelength at room temperature.

Output power can reach up to 600 mW in pulsed operation.

Hot phonon effects significantly influence carrier temperature and lasing performance.

Abstract

We propose an electrically pumped laser diode based on multiple HgTe quantum wells with band structure engineered for Auger recombination suppression. A model for accounting for hot phonons is developed for calculating the nonequilibrium temperature of electrons and holes. Using a comprehensive model accounting for carrier drift and diffusion, Auger recombination and hotphonon effects, we predict of lasing at $\lambda \sim 3 $ $\mu$m at room temperature in 2.2 nm HgTe/Cd$_{0.85}$Hg$_{0.15}$Te quantum well heterostructure. The output power in the pulse can reach up to 600 mW for 100 nanosecond-duration pulses.