Beam steering with quasi-mosaic bent silicon single crystals -- Computer simulations for 855 MeV and 6.3 GeV electrons and comparison with experiments

TL;DR

This study uses Monte Carlo simulations to analyze beam steering in bent silicon crystals at different energies, identifying key parameters affecting channeling and comparing results with experimental data.

Contribution

It demonstrates that anticlastic bending is not necessary to match experimental observations, challenging previous assumptions about quasi-mosaic crystal bending effects.

Findings

Simulation results align with experiments without anticlastic bending assumptions

Angular alignment significantly influences channeling efficiency

Quasi-mosaic bending is not essential for reproducing experimental data

Abstract

Monte Carlo simulations have been performed for 855 MeV and 6.3 GeV electrons channeling in silicon single crystals at circular bent (111) planes. The aim was to identify critical experimental parameters which effect the volume-deflection and volume-capture characteristics. To these belongs the angular alignment of the crystal with respect to the nominal beam direction. The continuum potential picture has been utilized. The simulation results were compared with experiments. It turns out that the assumption of an anticlastic bending of the crystal, bent on the principle of the quasi-mosaic effect, is not required to reproduce the experimental observations.