Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

TL;DR

This paper demonstrates the successful homoepitaxial growth of N-polar AlN using molecular beam epitaxy, highlighting the critical role of Al-assisted surface cleaning in maintaining N-polarity and achieving high-quality films for advanced electronic applications.

Contribution

It introduces Al-assisted cleaning as a key process for N-polar AlN growth via MBE, enabling high-quality, N-polar epitaxial films without polarity inversion.

Findings

Al-assisted cleaning preserves N-polarity during growth

Epitaxial layers show smooth, defect-free surfaces

Photoluminescence indicates reduced non-radiative centers

Abstract

N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity. The grown N-polar AlN epilayer with its smooth, pit-free surface duplicates the structural quality of the substrate as evidenced by a clean and smooth growth interface with no noticeable extended defects generation. Near band-edge photoluminescence peaks are observed at room temperature on samples with MBE-grown layers but not on the bare AlN substrates, implying the suppression of non-radiative recombination centers in the epitaxial N-polar AlN. These results are pivotal steps towards future high-power RF electronics and deep ultraviolet photonics based on the N-polar AlN platform.