Squeezed States Generation using Cryogenic InP HEMT Transistor Nonlinearity
Ahmad Salmanogli

TL;DR
This paper demonstrates that a cryogenic InP HEMT transistor's nonlinear properties can generate and manipulate quantum squeezed states and two-mode squeezing, with potential applications in quantum information processing.
Contribution
It provides a theoretical analysis of how transistor nonlinearity at cryogenic temperatures enables the generation and control of squeezed quantum states.
Findings
Squeezed states can be generated via transistor nonlinearity.
The system can produce two-mode squeezing.
The circuit exhibits antibunching and quadrature squeezing.
Abstract
This study focuses on generating and manipulating squeezed states with two external oscillators coupled by an InP HEMT transistor operating at cryogenic temperatures. First, the small-signal nonlinear model of the transistor at high frequency at 5 K is analyzed using quantum theory, and the related Lagrangian is theoretically derived. Subsequently, the total quantum Hamiltonian of the system is derived using Legendre transformation. The Hamiltonian of the system includes linear and nonlinear terms, by which the effects on the time evolution of the states are studied. The main result shows that the squeezed state can be generated owing to the nonlinearity of the transistor, and more importantly, it can be manipulated by some specific terms introduced in the nonlinear Hamiltonian. In fact, the nonlinearity of the transistors induces some effects such as capacitance, inductance, and…
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Taxonomy
TopicsNeural Networks and Reservoir Computing · Photonic and Optical Devices · Quantum and electron transport phenomena
