Possible structural and bond reconstruction in 2D ferromagnetic semiconductor VSe2 under uniaxial stress

TL;DR

This study uses first-principles calculations to show that uniaxial stress can induce a phase transition in 2D VSe2, enhancing its ferromagnetism and altering electronic properties, with implications for 2D material applications.

Contribution

It reveals that uniaxial stress can induce a metastable H' phase in 2D VSe2, with stronger ferromagnetism and significant electronic structure changes, providing new insights into strain-induced phase engineering.

Findings

H' phase becomes energetically favorable under uniaxial stress

H' phase exhibits enhanced ferromagnetism and higher Curie temperature

Bond length differences and covalence switch valence states, affecting magnetic properties

Abstract

2D semiconducting transition metal dichalcogenides have been used to make high-performance electronic, spintronic, and optoelectronic devices. Recently, room-temperature ferromagnetism and semiconducting property were found in 2D VSe$_2$ nanoflakes (mechanically exfoliated onto silicon substrates capped with a oxide layer) and are attributed to the stable 2H-phase of VSe$_2$ in the 2D limit. Here, our first-principles investigation show that a metastable semiconducting H' phase can be formed from the H VSe2 monolayer and some other similar when these 2D H-phase materials are under uniaxial stress or uniaxial strain. For the uniaxial stress (uniaxial strain) scheme, the H' phase will become lower in total energy than the H phase at the transition point. The calculated phonon spectra indicate the dynamical stability of the H' structures of VSe$_2$, VS$_2$, and CrS$_2$, and the path of phase switching between the H and H' VSe$_2$ phases is calculated. For VSe$_2$, the H' phase has stronger ferromagnetism and its Currier temperature can be substantially enhanced by applying uniaxial stress or strain. Spin-resolved electronic structures, energy band edges, and effective carrier masses for both of the H and H' phases can be substantially changed by the applied uniaxial stress or strain, leading to huge effective masses near the band edge of the strained H' phase. Analysis indicated that the largest bond length difference between the H' and H phases can reach -19\% for the Se3-Se3' bond, and there is noticeable covalence for the Se3-Se3' bond, which switches the valence of the nearby V atoms, leading to the enhanced ferromagnetism. Therefore, structural and bond reconstruction can be realized by applying uniaxial stress in 2D ferromagnetic H VSe$_2$ and some other similar. These can be useful to seeking more insights and phenomena in such 2D materials for potential applications.