Anomalous Hall conductivity control in Mn$_3$NiN antiperovskite by epitaxial strain along the kagome plane
D. Torres-Amaris, A. Bautista-Hernandez, Rafael, Gonz\'alez-Hern\'andez, Aldo. H. Romero, and A. C. Garcia-Castro

TL;DR
This study investigates how epitaxial strain in the kagome plane of Mn$_3$NiN antiperovskite influences its electronic structure and anomalous Hall conductivity, revealing nonlinear effects and potential for tunable topological properties.
Contribution
It demonstrates the linear tuning of electronic states and the nonlinear modulation of anomalous Hall conductivity through epitaxial strain in Mn$_3$NiN, providing insights into strain-controlled topological phenomena.
Findings
Epitaxial strain causes linear shifts in band energies near the Fermi level.
Tensile strain nearly suppresses the anomalous Hall conductivity.
Compressive strain enhances the anomalous Hall conductivity by up to 26%.
Abstract
Antiferromagnetic manganese-based nitride antiperovskites, such as MnNiN, hold a triangular frustrated magnetic ordering over their kagome lattice formed by the Mn atoms along the (111)-plane. As such, frustration imposes a non-trivial interplay between the symmetric and asymmetric magnetic interactions, which can only reach equilibrium in a noncollinear magnetic configuration. Consequently, the associated electronic interactions and their possible tuning by external constraints, such as applied epitaxial strain, play a crucial role in defining the microscopic and macroscopic properties of such topological condensed matter systems. Thus, in the present work, we explored and explained the effect of the epitaxial strain imposed within the (111)-plane, in which the magnetic and crystallographic symmetry operations are kept fixed, and only the magnitude of the ionic and electronic…
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Taxonomy
TopicsGraphene research and applications · Topological Materials and Phenomena · Chemical and Physical Properties of Materials
