Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films

TL;DR

This paper demonstrates how controlling the Fermi level in EuCd₂Sb₂ Weyl semimetal films can maximize the intrinsic anomalous Hall effect, with experimental and theoretical analysis showing a sharp peak in Hall conductivity.

Contribution

It reports the fabrication of EuCd₂Sb₂ single-crystalline films and the control of their intrinsic AHE through film techniques and Fermi level tuning.

Findings

Intrinsic AHE peaks sharply with carrier density.

First-principles calculations confirm energy dependence of AHE.

Fermi level control enhances anomalous Hall effect in Weyl semimetals.

Abstract

Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.