Effect of Tamm surface states on hot electron generation and Landau damping in nanostructures metal-semiconductor

TL;DR

This paper theoretically investigates how Tamm surface states at metal-semiconductor interfaces influence hot electron generation and Landau damping in plasmonic nanoparticles, revealing resonant enhancements and increased damping rates.

Contribution

It is the first to analyze the impact of Tamm states on hot electron generation and Landau damping in metal nanoparticles, highlighting their resonant effects.

Findings

Tamm states cause resonant hot electron generation.

Landau damping rate is enhanced by Tamm states.

Transition absorption at the interface reinforces effects.

Abstract

The hot electron generation in plasmonic nanoparticles is the key to efficient plasmonic photocatalysis. In the paper, we study theoretically for the first time the effect of Tamm states (TSs) at the interface metal-semiconductor on hot electron generation and Landau damping (LD) in metal nanoparticles. TSs can lead to resonant hot electron generation and to the LD rate enhanced by several times. The resonant hot electron generation is reinforced by the transition absorption due to the jump of the permittivity at the metal-semiconductor interface.