High carrier lifetimes in UMG multicrystalline wafers after P- diffusion compatible with high-efficiency cell structures

TL;DR

This study demonstrates that high-quality UMG multicrystalline silicon wafers can achieve carrier lifetimes suitable for high-efficiency solar cells through optimized passivation and P-diffusion processes, indicating their potential for cost-effective PV technology.

Contribution

It introduces an effective passivation scheme for UMG-Si wafers that significantly improves carrier lifetime and device performance, enabling high-efficiency cell architectures.

Findings

Carrier lifetimes over 600 us in UMG-Si wafers after passivation.

Implied Voc up to 710 mV with Al2O3 passivation layers.

Record-breaking electronic quality of UMG-Si demonstrated.

Abstract

High-quality multicrystalline Upgraded Metallurgical Grade Silicon (UMG-Si) offers significant advantages over conventional polysilicon-based PV technology, associated to lower cost, lower energy budget and lower carbon footprint. The aim of this study is twofold: on the one hand, to ascertain the efficiency potential of solar cells based on this material in terms of carrier lifetime; and on the other hand, to explore, as a result of that, the adoption of high-efficiency cell architectures by establishing an effective rear-side passivation scheme for the implementation of passivated emitter rear contact (PERC) devices. The carrier lifetime and the surface passivation efficacy are investigated for different passivating layer configurations after single and double P-diffusion gettering processes. Layer stacks consisting of Al2O3, SiOxNy and a-SiNx:H capping overlayers have been optimized, on industrial size, saw-damage-etched UMG wafers and results compared to those obtained using reference iodine-ethanol (IE) passivation. Diagnosis based on minority carrier lifetime and implied Voc (iVoc) measurements helped monitor the impact of parameter optimization on wafer quality, particularly after firing processes. Carrier lifetimes over 600 us at 10^15 cm-3 injection level as well as up to 790 us locally have been measured in UMG-Si wafers passivated with IE after a Phosphorus Diffusion Gettering (PDG), demonstrating the suitability of the material for high-efficiency cell architectures. Values higher than 300 us have been obtained with Al2O3-based passivation layers for gettered UMG wafers, with implied Voc values up to 710 mV. These record-breaking lifetimes and iVoc figures obtained with p-type multicrystalline UMG-Si material demonstrate a significant upgrading of its electronic quality by means of industry-scalable technical processes.