Probing edge state conductance in ultra-thin topological insulator films
Arthur Leis, Michael Schleenvoigt, Kristof Moors, Helmut Soltner,, Vasily Cherepanov, Peter Sch\"uffelgen, Gregor Mussler, Detlev Gr\"utzmacher,, Bert Voigtl\"ander, Felix L\"upke, F. Stefan Tautz

TL;DR
This study investigates the electronic properties of ultra-thin topological insulator films, revealing that spectroscopic detection of edge states does not necessarily indicate ballistic transport, which requires nanoscale multi-tip transport measurements for confirmation.
Contribution
It demonstrates that spectroscopic observation of edge states alone can be misleading and highlights the importance of nanoscale transport experiments to confirm ballistic edge channels in topological insulators.
Findings
Spectroscopy shows edge states in thin films, but transport experiments do not confirm ballistic conductance.
Nanoscale multi-tip transport is essential for identifying true topological edge channels.
Detection of edge states in spectroscopy does not guarantee the presence of ballistic transport.
Abstract
Quantum spin Hall (QSH) insulators have unique electronic properties, comprising a band gap in their two-dimensional interior and one-dimensional spin-polarized edge states in which current flows ballistically. In scanning tunneling microscopy (STM), the edge states manifest themselves as a localized density of states. However, there is a significant research gap between the observation of edge states in nanoscale spectroscopy, and the detection of ballistic transport in edge channels which typically relies on transport experiments with microscale lithographic contacts. Here, we study few-layer films of the three-dimensional topological insulator (BiSbTe, for which a topological transition to a two-dimensional topological QSH insulator phase has been proposed. Indeed, an edge state in the local density of states is observed within the band gap. Yet, in nanoscale…
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Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · Graphene research and applications
