Forecasting lifetime and performance of a novel NVM last-level cache with compression
Carlos Escuin, Pablo Iba\~nez, Teresa Monreal, Jose M. Llaberia,, Victor Vi\~nals

TL;DR
This paper introduces a novel NVM last-level cache organization using data compression and wear-leveling, enabling accurate lifetime and performance forecasting through detailed simulation and prediction methods.
Contribution
It proposes a new NV-LLC architecture with compression and wear-leveling, along with a forecasting procedure for detailed temporal analysis of cache degradation.
Findings
Compression reduces cache block size and delays wear-out.
The proposed method accurately predicts cache lifetime and performance metrics.
The new NV-LLC design has minimal additional cost but significantly extends effective capacity over time.
Abstract
Non-volatile memory (NVM) technologies are interesting alternatives for building the on-chip Last-Level Cache (LLC). Their advantages, compared to SRAM memory, are higher density and lower static power, but each write operation slightly wears out the bitcell, to the point of losing its storage capacity. In this context, this paper proposes a novel NV-LLC organization leveraging data compression. Data compression reduces the size of the blocks and, together with wear-leveling mechanisms, can defer the degradation of such a NV-LLC. Moreover, as capacity is reduced by write wear, data compression enables degraded cache frames to allocate blocks whose compressed size is adequate. From a methodological point of view, although different approaches are used in the literature to analyze the degradation of a NV-LLC, none of them allows to study in detail its temporal evolution. In this sense,…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsSemiconductor materials and devices · Advanced Data Storage Technologies · Ferroelectric and Negative Capacitance Devices
