High-T$_c$ cuprates: a story of two electron subsystems

TL;DR

This review discusses the dual electronic subsystems in cuprate superconductors, highlighting how localized and itinerant holes influence their normal and superconducting states, and proposes a mechanism involving Fermi-liquid carriers and localized holes.

Contribution

It introduces a unified view of cuprate electronic behavior, emphasizing the universal conductance features and a superconducting mechanism based on carrier interactions.

Findings

Identification of two electronic subsystems in cuprates

Universal Fermi-liquid behavior of itinerant holes

Proposed mechanism involving carrier interactions and bonding changes

Abstract

A review of the phenomenology and microscopy of cuprate superconductors is presented, with particular attention to universal conductance features, which reveal the existence of two electronic subsystems. The overall electronic system consists of $1+p$ charges, where $p$ is the doping. At low dopings exactly one hole is localized per planar copper-oxygen unit, while upon increasing doping and temperature, the hole is gradually delocalized and becomes itinerant. Remarkably, the itinerant holes exhibit identical Fermi-liquid character across the cuprate phase diagram. This universality enables a simple count of carrier density and yields comprehensive understanding of the key features in the normal and superconducting state. A possible superconducting mechanism is presented, compatible with the key experimental facts. The base of this mechanism is the interaction of fast Fermi-liquid carriers with localized holes. A change in the microscopic nature of chemical bonding in the copper-oxide planes, from ionic to covalent, is invoked to explain the phase diagram of these fascinating compounds.