Nonlinear and Ultrafast All-Dielectric Metasurfaces at the Center for Integrated Nanotechnologies

TL;DR

This paper reviews recent advances in nonlinear and ultrafast all-dielectric metasurfaces, highlighting their potential for enhanced nonlinear optical effects and on-chip quantum light generation.

Contribution

It presents new methods for engineering nonlinear effects in semiconductor metasurfaces, including harmonic generation and quantum light applications.

Findings

Demonstrated harmonic generation in GaAs metasurfaces using Mie resonances

Achieved nonlinear effects enhancement with Bound State in the Continuum

Showcased potential for on-chip quantum light sources

Abstract

Metasurfaces control optical wavefronts via arrays of nanoscale resonators laid out across a surface. When combined with III-V semiconductors with strong optical nonlinearities, a variety of nonlinear effects such as harmonic generation and all optical modulation can be enabled and enhanced at the nanoscale. This review presents our research on engineering and boosting nonlinear effects in ultrafast and nonlinear semiconductor metasurfaces fabricated at the Center for Integrated Nanotechnologies (CINT). We cover our recent works on parametric generation of harmonic light via direct and cascaded processes in GaAs-metasurfaces using Mie-like optical resonances or symmetric-protected Bound State in the Continuum, and then describe the recent advances on harmonic generation in all-dielectric metasurfaces coupled to intersubband transitions in III-V semiconductor heterostructures. The review concludes on the potential of metasurfaces to serve as the next platform for on-chip quantum light generation.