Planckian properties of 2D semiconductor systems
Seongjin Ahn, Sankar Das Sarma

TL;DR
This paper investigates the low-temperature resistivity and inelastic scattering in doped 2D semiconductors, finding approximate adherence to the Planckian bound and exploring the effects of Coulomb interactions and carrier density.
Contribution
It provides a detailed analysis of Planckian behavior in 2D semiconductors, introducing a generalized bound and examining the role of Coulomb interactions and density.
Findings
Resistivity is nearly linear in temperature at low T due to screening and disorder.
The Planckian bound approximately holds, with scattering rates not exceeding $k_B T$ by more than an order of magnitude.
Electron-electron scattering rates also obey the Planckian bound within an order of magnitude.
Abstract
We describe and discuss the low-temperature resistivity (and the temperature-dependent inelastic scattering rate) of several different doped 2D semiconductor systems from the perspective of the Planckian hypothesis asserting that provides a scattering bound, where is the appropriate relaxation time. The regime of transport considered here is well-below the Bloch-Gruneisen regime so that phonon scattering is negligible. The temperature-dependent part of the resistivity is almost linear-in- down to arbitrarily low temperatures, with the linearity arising from an interplay between screening and disorder, connected with carrier scattering from impurity-induced Friedel oscillations. The temperature dependence disappears if the Coulomb interaction between electrons is suppressed. The temperature coefficient of the resistivity is enhanced at lower…
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Taxonomy
TopicsAdvancements in Semiconductor Devices and Circuit Design · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices
