Tunnel Barrier to Spin Filter: Electronic Transport Characteristics of Transition Metal Atom Encapsulated in Smallest Cadmium Telluride Cage

TL;DR

This study uses first principles calculations to explore electronic transport in a Cd9Te9 cage with various transition metals, revealing spin filtering effects and half-metallicity relevant for spintronic applications.

Contribution

It provides a comparative analysis of electronic transport properties of transition metal-encapsulated Cd9Te9 cages, highlighting their potential as spin filters and half-metallic conductors.

Findings

Certain TM-encapsulated cages exhibit half-metallicity.

The bare Cd9Te9 acts as a tunnel barrier at low bias.

Encapsulated TM atoms induce spin filtering effects.

Abstract

We report first principles theory-based comparative electronic transport studies performed for an atomic chain of Au, bare Cd9Te9 cage-like cluster and single transition metal (TM) (Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ru, Rh, Pd) atom encapsulated within the Cd9Te9 using Au(111) as electrodes. The bare cluster is semiconducting and acts as a tunnel barrier up to a particular applied bias and beyond that, the device has a linear current-voltage relationship. Several TM (Ti, V, Cr, Mn, Fe) encapsulated in the cage show half-metallic behavior and spin filtering effect in the I-V characteristics of the device. A detailed qualitative and quantitative analysis of I-V characteristics for metallic, semiconducting, and half-metallic nanostructures has been carried out.