Characterization of Passive CMOS Strip Sensors

TL;DR

This paper presents laboratory measurements of passive CMOS strip sensors, demonstrating their electrical performance and charge collection capabilities, indicating potential as cost-effective alternatives for silicon tracking detectors in high-energy physics experiments.

Contribution

It provides the first detailed electrical and charge collection characterization of silicon strip sensors produced in a passive p-CMOS process.

Findings

No effect of stitching process on sensor performance

Effective charge collection demonstrated with 90Sr source and laser

Potential for cost-effective silicon tracking detectors

Abstract

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider experiments. With the ever-increasing area covered by silicon tracking detectors cost effective alternatives to the current silicon sensors and more integrated designs are desirable. This article describes results obtained from laboratory measurements of silicon strip sensors produced in a passive p-CMOS process. Electrical characterization and charge collection measurements with a 90Sr source and a laser with infrared wavelength showed no effect of the stitching process on the performance of the sensor.