Hall field-induced magneto-oscillations near charge neutrality point in graphene

TL;DR

This study investigates non-equilibrium transport in graphene under high dc current and magnetic field, revealing Hall field-induced magneto-oscillations near charge neutrality, linked to phonon-assisted intra-Landau level transitions.

Contribution

It demonstrates the emergence of novel magnetoresistance oscillations in graphene caused by Hall field effects and phonon interactions, expanding understanding of non-equilibrium phenomena in 2D materials.

Findings

Observation of Hall field-induced magneto-oscillations near charge neutrality

Identification of two oscillation branches with linear dispersion

Evidence of phonon-assisted intra-Landau level transitions

Abstract

We explore the non-equilibrium transport regime in graphene using a large dc current in combination with a perpendicular magnetic field. The strong in-plane Hall field that is generated in the bulk of the graphene channel results in Landau levels that are tilted spatially. The energy of cyclotron orbits in the bulk varies as a function of the spatial position of the guiding center, enabling us to observe a series of compelling features. While Shubnikov-de Haas oscillations are predictably suppressed in the presence of the Hall field, a set of fresh magnetoresistance oscillations emerge near the charge neutrality point as a function of dc current. Two branches of oscillations with linear dispersions are evident as we vary carrier density and dc current, the velocity of which closely resembles the TA and LA phonon modes, suggestive of phonon-assisted intra-Landau level transitions between adjacent cyclotron orbits. Our results offer unique possibilities to explore non-equilibrium phenomena in two-dimensional materials and van der Waals heterostructures.