How to Report and Benchmark Emerging Field-Effect Transistors

TL;DR

This paper establishes consensus guidelines for reporting and benchmarking key parameters of emerging low-dimensional FETs, aiming to standardize assessments and facilitate consistent progress in the field.

Contribution

It provides a set of standardized reporting and benchmarking guidelines for 2D semiconductor FETs, addressing current inconsistencies in the emerging field.

Findings

Consensus guidelines for FET reporting established

Example application to 2D semiconductor FETs provided

Improved comparability and assessment of device performance

Abstract

Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.