Transmission laser welding of similar and dissimilar semiconductor materials

TL;DR

This paper demonstrates the feasibility of transmission laser welding for silicon and other semiconductors using nanosecond pulses, achieving high shear strength and promising flexible, high-efficiency manufacturing applications.

Contribution

First feasibility demonstration of transmission laser welding for silicon and other semiconductors with high shear strength using nanosecond laser pulses.

Findings

Achieved shear strength of 32±10 MPa in silicon welding.

Demonstrated successful welding of similar and dissimilar semiconductors.

Utilized a compact fiber laser, indicating potential for flexible manufacturing processes.

Abstract

Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential semiconductors. Concentrating on circumventing the optical limits on the deliverable energy density at interfaces between narrow-gap materials with intense infrared light, we make the first feasibility demonstration of transmission laser welding between silicon workpieces using nanosecond laser pulses. We obtain a shear joining strength of 32$\pm$10 MPa which compares very favorably to the complex process alternatives. Supported by experiments repeated on different material combinations including gallium arsenide, we confirm that this remarkable performance level is achievable for similar and dissimilar semiconductors. The demonstrations rely on a small footprint fiber laser, an aspect that holds great promises for the advent of a high-efficiency flexible process beneficial for important technology developments including lab-on-a-chip and hybrid semiconductor systems.