Shell DFT-1/2 method towards engineering accuracy for semiconductors: GGA versus LDA
Hanli Cui, Shengxin Yang, Jun-Hui Yuan, Li-Heng Li, Fan Ye, Jinhai, Huang, Kan-Hao Xue, and Xiangshui Miao

TL;DR
This study evaluates the effectiveness of the Shell DFT-1/2 method in improving semiconductor band gap predictions, comparing LDA and GGA functionals across various materials and analyzing factors influencing accuracy.
Contribution
It systematically assesses how different exchange-correlation functionals affect Shell DFT-1/2's accuracy in semiconductor band gap calculations.
Findings
Shell DFT-1/2 improves band gap predictions over standard DFT.
The choice of XC functional significantly impacts accuracy.
Optimized lattice parameters influence the correction effectiveness.
Abstract
The Kohn-Sham gaps of density functional theory (DFT) obtained in terms of local density approximation (LDA) or generalized gradient approximation (GGA) cannot be directly linked to the fundamental gaps of semiconductors, but in engineering there is a strong demand to match them through certain rectification methods. Shell DFT-1/2 (shDFT-1/2), as a variant of DFT-1/2, is a potential candidate to yield much improved band gaps for covalent semiconductors, but its accuracy depends on the LDA/GGA ground state, including optimized lattice parameters, basic Kohn-Sham gap before self-energy correction and the amount of self-energy correction that is specific to the exchange-correlation (XC) functional. In this work, we test the LDA/GGA as well as shDFT-1/2 results of six technically important covalent semiconductors Si, Ge, GaN, GaP, GaAs and GaSb, with an additional ionic insulator LiF for…
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Taxonomy
TopicsZnO doping and properties · Superconductivity in MgB2 and Alloys · Ga2O3 and related materials
