Validation of x-ray line-profile analysis of extended defects in deformed crystals

TL;DR

This paper validates the use of x-ray line profile analysis for quantifying extended defects in crystals by using simulated data with known defect content, demonstrating its reliability.

Contribution

It introduces a validation method for x-ray line profile analysis using simulated defective crystals, confirming its accuracy in defect quantification.

Findings

Line profile analysis accurately quantifies dislocations.

Line profile analysis accurately quantifies stacking faults.

Validation with simulated data confirms method reliability.

Abstract

Quantitative measurements of extended defects in crystalline materials are important in understanding material behaviour. X-ray line profile analysis provides a complement to direct counting in the electron microscope, but is an indirect method and requires validation. Previous studies have focused on comparing x-ray analysis to electron microscopy results. Instead, we use simulated defective material with known defect content and apply line profile analysis to calculated diffraction profiles to directly show that line profile analysis can reliably quantify dislocations and stacking faults.